• UGI USER
  • Dec 26, 2022
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GaN Nanostructures

Why in the News?

  • Recently, Researchers in India have shown for the first time infrared (IR) light emission and absorption with GaN nanostructures.

Key Points

  • The demonstration of infrared light-matter interactions in GaN is new.
  • Surface polariton excitations in GaN nanostructures, which result in light-matter interactions at the IR spectral region, have been used by researchers.
  • This can aid in the development of extremely effective infrared absorbers, emitters, and modulators that are valuable in imaging, sensing, energy, defence, and other technological fields.
  • Applications for polaritonic technology include quantum computers, waste-heat converters, next-generation light sources, solar energy converters, and secure high-speed light-based communication (LiFi).

About Gallium Nitride (GaN)

  • One of the most advanced semiconductors.
  • It is a substance that emits blue light and is commonly utilised.
  • Benefits include dependability, small size, great efficiency, quick switching, low on-resistance, and excellent thermal conductivity.
  • Due to its use in 5G, space, and defence applications, gaN technology is crucial from a strategic standpoint.